1N3070-1
1N3070-1 is SWITCHING DIODE manufactured by Microsemi.
FEATURES
- 1N3070-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-
- -
- 19500/169 SWITCHING
DIODE
METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION
MAXIMUM RATINGS AT 25 °C
Operating Temperature: Storage Temperature: Surge Current A, sine, 1u S: Surge Current B, sine, 1S: Total Power Dissipation: Operating Current: -65°C to +175°C -65°C to +175°C 2.0A 0.5A 500m W 100m A, TA= +25°C 175V
Derating Factor:
D.C. Reverse Voltage (VRWM):
0.667m A/°C above TA= +25°C
DC ELECTRICAL CHARACTERISTICS
Ambient (°C) IF m A Min Max Ambient V V (°C)
V (dc) Min Max Ambient µA µA (°C)
IR µA Min Max V V
25 -55
100 100
- 1.0 1.2
25 150
175 175
- 0.1 100
- DESIGN DATA
Case: Hermetically sealed glass package per MILPRF-19500/169 DO-7 outline Lead Material: Copper clad steel Lead Finish: Tin/Lead Thermal Resistance (RθJL): 250°C/W maximum at L=.375” Thermal Impedance (ZθJX): 70°C/W maximum Marking: Alpha numeric. Polarity: Cathode end is banded.
AC ELECTRICAL CHARACTERISTICS AT 25°C
Symbol
Capacitance @ 0V TRR @ IF =IR=30m A, IRec = 3m A. p F nsec
Min
- Max 5 50
IRELAND
- GORT ROAD, ENNIS, CO. CLARE
PHONE: TOLL FREE: FAX: +353 65 6840044 +186 62 702434 +353 65 6822298
.MICROSEMI.
U.S.A. DOMESTIC SALES CONTACT
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