1N6760 Overview
-55°C to +125°C Storage Temperature: -55°C to +150°C Average Rectified Forward Current: 1.0 AMP @TL +55°C, L = 3/8” Derating:.
1N6760 datasheet by Microsemi (now Microchip Technology).
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 1N6760 |
|---|---|
| Datasheet | 1N6760 1N6761 Datasheet (PDF) |
| File Size | 45.43 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | SCHOTTKY BARRIER DIODES |
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-55°C to +125°C Storage Temperature: -55°C to +150°C Average Rectified Forward Current: 1.0 AMP @TL +55°C, L = 3/8” Derating:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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1N6760 | 1 AMP SCHOTTKY BARRIER RECTIFIERS | Compensated Deuices Incorporated |
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1N6760-1 | 1 Amp Schottky Barrier Rectifiers | Microsemi |
View all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| 1N6761 | SCHOTTKY BARRIER DIODES |
| 1N6759 | SCHOTTKY BARRIER DIODES |
| 1N6774 | ULTRAFAST SILICON POWER RECTIFIER |
| 1N6775 | ULTRAFAST SILICON POWER RECTIFIER |
| 1N6776 | ULTRAFAST SILICON POWER RECTIFIER |
| 1N6777 | ULTRAFAST SILICON POWER RECTIFIER |
| 1N6309US | (1N6309US - 1N6355US) VOIDLESS-HERMETICALLY-SEALED Surface Mount |
| 1N6310US | (1N6309US - 1N6355US) VOIDLESS-HERMETICALLY-SEALED Surface Mount |
| 1N6311US | (1N6309US - 1N6355US) VOIDLESS-HERMETICALLY-SEALED Surface Mount |
| 1N6312US | (1N6309US - 1N6355US) VOIDLESS-HERMETICALLY-SEALED Surface Mount |