1N821UR-1 - TEMPERATURE COMPENSATED ZENER DIODES

Microsemi (now Microchip Technology)

Datasheet Details

Part number	1N821UR-1
Manufacturer	Microsemi (now Microchip Technology)
File Size	359.28 KB
Description	TEMPERATURE COMPENSATED ZENER DIODES
Datasheet	1N821UR-1 Datasheet

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Other Datasheets by Microsemi (now Microchip Technology)

Part Number	Description
1N823UR-1	TEMPERATURE COMPENSATED ZENER DIODES
1N825UR-1	TEMPERATURE COMPENSATED ZENER DIODES
1N829UR-1	TEMPERATURE COMPENSATED ZENER DIODES
1N897	(1N897 - 1N899) PELLET DIODES
1N898	(1N897 - 1N899) PELLET DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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• 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1 AND 1N829UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/159 • TEMPERATURE COMPENSATED ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 6.2 AND 6.55 VOLT NOMINAL ZENER VOLTAGES • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION 1N821UR-1 thru 1N829UR-1 and CDLL821 thru CDLL829A MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C DC Power Dissipation: 500mW @ +50°C Power Derating: 4 mW / °C above +50°C REVERSE LEAKAGE CURRENT lR = 2 µA @ 25°C & VR = 3 Vdc ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.