2N2150 - NPN POWER SILICON TRANSISTOR

Microsemi (now Microchip Technology)

Datasheet Details

Part number	2N2150
Manufacturer	Microsemi (now Microchip Technology)
File Size	65.65 KB
Description	NPN POWER SILICON TRANSISTOR
Datasheet	2N2150 Datasheet

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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/277 Devices 2N2150 2N2151 Qualified Level JANTX MAXIMUM RATINGS (TC = 250C unless otherwise noted) Ratings Symbol Value Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ Tc = +1000C(1) Operating & Storage Junction Temperature Range VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC 100 150 8.0 2.0 2.0 30 -65 to +200 Max. 3.3 Units Vdc Vdc Vdc Adc Adc W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly @ 0.3 W/0C for TC > +1000C 0 Unit C/W TO-111* *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = +250C) Characteristics Symbol V(BR)CEO VCBO ICEO ICBO ICEX IEBO ICES Min.