2N2432 - NPN SILICON LOW POWER TRANSISTOR

Microsemi (now Microchip Technology)

Datasheet Details

Part number	2N2432
Manufacturer	Microsemi (now Microchip Technology)
File Size	75.62 KB
Description	NPN SILICON LOW POWER TRANSISTOR
Datasheet	2N2432 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2N2432	Bipolar NPN Device	Seme LAB
2N2405	NPN silicon annular transistors	Motorola
2N2405	Silicon NPN Transistor	NTE
2N2405	MEDIUM POWER SILICON NPN PLANAR TRANSISTOR	Semelab
2N2405	SILICON NPN TRANSISTOR	Central Semiconductor

Other Datasheets by Microsemi (now Microchip Technology)

Part Number	Description
2N2432A	NPN SILICON LOW POWER TRANSISTOR
2N2150	NPN POWER SILICON TRANSISTOR
2N2604	(2N2604 / 2N2605) PNP SILICON LOW POWER TRANSISTOR
2N2605	(2N2604 / 2N2605) PNP SILICON LOW POWER TRANSISTOR
2N2609	P-CHANNEL J-FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/313 Devices 2N2432 2N2432A Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VECO IC @ TA = +250C (1) @ TC = +250C (2) PT Tstg TJ Symbol RθJC 2N2432 30 30 15 2N2432A 45 45 18 Unit Vdc Vdc Vdc mAdc mW mW 0 C 0 C Unit mW/ 0C www.DataSheet4U.com Operating & Storage Junction Temp. Range 100 300 600 -65 to +200 -65 to +175 Max. 0.25 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.0 mW/0C above TA > +250C 2) Derate linearly 4.