2N3251A
2N3251A is PNP BIPOLAR TRANSISTOR manufactured by Microsemi.
Features
- -
- - Meets MIL-S-19500/323 Collector-Base Voltage 60V Collector Current: 200 m A Fast Switching 370 n S
60 Volts 200 m Amps
PNP BIPOLAR TRANSISTOR Maximum Ratings
RATING Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation o @ T A = 25 C o Derate above 25 C Total Device Dissipation o @ T C = 25 C o Derate above 25 C Operating Temperature Range Storage Temperature Range Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case SYMBOL VCEO VCBO VEBO IC PD MAX. -60 -60 -5.0 -200 0.36 2.4 PD 1.2 8 -65 to +175 -65 to +175 417 146 Watts o m W/ C o C o o o
UNIT Vdc Vdc Vdc m Adc Watts o m W/ C
TJ TS RθJA RθJC
C/W C/W
Mechanical Outline
Datasheet# MSC0281A 5/19/97
2N3251A Electrical Parameters (TA @ 25° C unless otherwise specified)
CHARACTERISTICS Off Characteristics Collector-Emitter Breakdown Voltage(1) (I C = -10 m Adc) Collector-Base Breakdown Voltage (I C = -10 µAdc) Emitter-Base Breakdown Voltage (I E = -10 µAdc) Collector Cutoff Current (V CE = -40 Vdc, V EB = -3.0 Vdc) ( at 150 C ) Base Cutoff Current (V CE = -40 Vdc, V EB = -3.0 Vdc) D.C. Current Gain (I C = -0.1 m Adc, V CE = -1.0 Vdc) (I C = -1.0 m Adc, V CE = -1.0 Vdc) (I c = -1.0m Adc, V CE= -1.0Vdc) @ -55C (I C = -10 m Adc, V CE = -1.0 Vdc)(1) (I C = -50 m Adc, V CE = -1.0 Vdc)(1) Collector-Emitter Saturation Voltage(1) (I C = -10 m Adc, I B = -1.0 m Adc) (I C = -50 m Adc, I B = -5.0 m Adc) Base-Emitter Saturation Voltage(1) (I C = -10 m Adc, I B = -1.0 m Adc) (I C = -50 m Adc, I B = -5.0 m Adc) Magnitude of mon emitter small-signal short-circuit forward current transfer ratio (I C = -10 m Adc, V CE = -20 Vdc, f = 100MHz) Output Capacitance (V CB = -10 Vdc, I E = 0, 100k Hz < f < 1MHz) Input Capacitance (V EB = -10 Vdc, I C = 0, 100k Hz < f < 1MHz) Input Impedance (I C = -1.0 m A, V CE = -10 V, f = 1.0 k Hz) Voltage Feedback Ratio (I C = -1.0 m A, V CE = -10 V, f = 1.0 k Hz) Small- Signal Current Gain (I C = -1.0 m A, V CE = -10 V, f =...