2N5002 - (2N5002 / 2N5004) NPN POWER SILICON TRANSISTOR

Microsemi (now Microchip Technology)

Datasheet Details

Part number	2N5002
Manufacturer	Microsemi (now Microchip Technology)
File Size	77.25 KB
Description	(2N5002 / 2N5004) NPN POWER SILICON TRANSISTOR
Datasheet	2N5002 Datasheet

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Other Datasheets by Microsemi (now Microchip Technology)

Part Number	Description
2N5004	(2N5002 / 2N5004) NPN POWER SILICON TRANSISTOR
2N5031	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
2N5109	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
2N5151	PNP POWER SILICON TRANSISTOR
2N5151L	PNP POWER SILICON TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current www.DataSheet4U.com Symbol VCEO VCBO VEBO IC IC(3) PT TJ, Tstg Symbol RθJC 0 Value 80 100 5.5 5.0 10 2.0 58 -65 to +200 Max. 3.0 88 Units Vdc Vdc Vdc Adc W 0 Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1) Derate linearly 11.4 mW/ C for TA > 25 C 2) Derate linearly 331 mW/0C for TC > 250C 3) This value applies for PW ≤ 8.