2N5663 Datasheet | Microsemi

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VCER VEBO IB IC @ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range Total Power Dissipation PT TJ, Tstg 2N5660 2N5661 5.0 87.5 2N5660 2N5661 2N5662 2N5663 200 300 250 400 250 400 6.0 0.5 2.0 2N5660 2N5662 2N5661 2N5663 2.0(1) 1.0(2) (3) 20 15(4) -65 to +200 2N5662 2N5663 6.67 145.8 Unit Vdc Vdc Vdc Vdc Adc Adc TO-66- (TO-213AA) 2N5660, 2N5661 W W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) 2) 3) Symbol RθJC Unit C/W 4) RθJA Derate linearly 11.4 m W/0C for TA >+ 250C Derate linearly 5.7 m W/0C for TA > +250C Derate linearly 200 m W/0C for TC > +1000C Derate linearly 150 m W/0C for TC > +1000C TO-5- 2N5662, 2N5663 - See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 m Adc Collector-Base Breakdown Voltage IC = 10 m Adc, RBE = 100Ω Emitter-Base Breakdown Voltage IE = 10 µAdc 2N5660, 2N5662 2N5661, 2N5663 2N5660, 2N5662 2N5661, 2N5663 V(BR)CEO 200 300 250 400 6.0 Vdc V(BR)CER V(BR)EBO Vdc Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N5660, 2N5661, 2N5662, 2N5663 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Collector-Emitter Cutoff Current VCE = 200 Vdc VCE = 300 Vdc Collector-Base Cutoff Current VCB = 200 Vdc VCB = 250 Vdc VCB = 300 Vdc VCB = 400 Vdc Symbol 2N5660, 2N5662 2N5661, 2N5663 2N5660, 2N5662 2N5660, 2N5662 2N5661, 2N5663 2N5661, 2N5663 ICES Min. Max. 0.2 0.2 0.1 1.0 0.1 1.0 Unit µAdc µAdc µAdc m Adc µAdc m Adc ICBO ON...