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TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/472 Devices 2N6350 2N6351 2N6352 2N6353 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current
Symbol
VCER VCBO VEBO IB IC
2N6350 2N6352
80 80
2N6351 2N6353
150 150
Units
Vdc Vdc Vdc Vdc Adc Adc Adc
12 6.0 0.5 5.0 10(1)
2N6350 2N6351
Total Power Dissipation @ TA = 250C @ TC = 1000C Operating & Storage Junction Temperature Range PT TJ, Tstg Symbol RθJC
2N6352 2N6353
W W 0 C
2N6350, 2N6351 TO-33*
1.0(2) 2.0(4) (3) 5.0 25(5) -65 to +200
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Applies for tp ≤ 10 ms, Duty cycle ≤ 50% 2) Derate linearly @ 5.
2N6350 Datasheet
