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Advanced Technical Information
HiPerFETTM Power MOSFETs
Q-Class
IXFK 60N55Q2 IXFX 60N55Q2
VDSS ID25 RDS(on)
= = =
550 V 60 A 88 mΩ
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr
trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 550 550 ± 30 ± 40 60 240 60 75 4.0 20 735 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C
PLUS 247TM (IXFX)
D (TAB) G D
TO-264 AA (IXFK)
G D S
1.6 mm (0.
99016 Datasheet
