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APT100GT120JR - Thunderbolt IGBT

Key Features

  • Low Forward Voltage Drop.
  • Low Tail Current.
  • Integrated Gate Resistor Low EMI, High Reliability.
  • RoHS Compliant.
  • RBSOA and SCSOA Rated.
  • High Frequency Switching to 50KHz.
  • Ultra Low Leakage Current S ISOTOP ® OT 22 7 "UL Recognized" file # E145592 Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitabl.

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Other Datasheets by Microsemi (now Microchip Technology)

Part Number Description
APT100GT120JRDL Resonant Mode IGBT
APT100GT120JRDQ4 Thunderbolt IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com APT100GT120JR 1200V, 100A, VCE(ON) = 3.2V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. E G C E Features • Low Forward Voltage Drop • Low Tail Current • Integrated Gate Resistor Low EMI, High Reliability • RoHS Compliant • RBSOA and SCSOA Rated • High Frequency Switching to 50KHz • Ultra Low Leakage Current S ISOTOP ® OT 22 7 "UL Recognized" file # E145592 Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.