APT100GT60JRDL - Resonant Mode Combi IGBT

Datasheet Summary

Features

Low Forward Voltage Drop.
Low Tail Current.
Integrated Gate Resistor Low EMI, High Reliability.
Ultra soft recovery diode.
RBSOA and SCSOA Rated.
High Frequency Switching to 50KHz.
Ultra Low Leakage Current Typical.

Microsemi Corporation

📥 Download Datasheet

Datasheet Details

Part number	APT100GT60JRDL
Manufacturer	Microsemi Corporation
File Size	226.86 KB
Description	Resonant Mode Combi IGBT
Datasheet	APT100GT60JRDL Datasheet
Additional preview pages of the APT100GT60JRDL datasheet.

📁 Similar Datasheet

APT100GT60JR - Thunderbolt IGBT (Advanced Power Technology)
APT100GF60B2R - The Fast IGBT is a new generation of high voltage power IGBTs. (Advanced Power Technology)
APT100GF60JR - The Fast IGBT is a new generation of high voltage power IGBTs. (Advanced Power Technology)
APT100GF60JRD - The Fast IGBT is a new generation of high voltage power IGBTs. (Advanced Power Technology)
APT100GF60LR - The Fast IGBT is a new generation of high voltage power IGBTs. (Advanced Power Technology)
APT1001R1AVR - MOSFET (Advanced Power Technology)
APT1001R1BN - MOSFET (Advanced Power Technology)
APT1001R1BVFR - MOSFET (Advanced Power Technology)
APT1001R1HVR - MOSFET (Advanced Power Technology)
APT1001R3BN - MOSFET (Advanced Power Technology)

Other Datasheets by Microsemi Corporation

APT100GT60JRDQ4 - Thunderbolt IGBT
APT100GT60B2R - Thunderbolt IGBT
APT100GT60B2RG - Thunderbolt IGBT
APT100GT60LR - Thunderbolt IGBT
APT100GT60LRG - Thunderbolt IGBT
APT100GT120JR - Thunderbolt IGBT
APT100GT120JRDL - Resonant Mode IGBT
APT100GT120JRDQ4 - Thunderbolt IGBT

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com APT100GT60JRDL 600V, 100A, VCE(ON) = 2.1V Typical Resonant Mode Combi IGBT® The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.

Published: Mar 30, 2010 |