• Part: APT200GT60JRDL
  • Manufacturer: Microsemi
  • Size: 292.62 KB
Download APT200GT60JRDL Datasheet PDF
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APT200GT60JRDL Description

TYPICAL PERFORMANCE CURVES APT200GT60JRDL 600V, 200A, VCE(ON) = 2.0V Typical .. APT200GT60JRDL Resonant Mode bi IGBT® The Thunderbolt IGBT® used in this Resonant Mode bi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.

APT200GT60JRDL Key Features

  • Low Forward Voltage Drop
  • Low Tail Current
  • Integrated Gate Resistor Low EMI, High Reliability
  • Low forward Diode Voltage (VF)
  • RoHS pliant
  • Ultra soft recovery diode
  • RBSOA and SCSOA Rated
  • High Frequency Switching to 50KHz
  • Ultra Low Leakage Current