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APT20GN60BDQ1G - High Speed PT IGBT

Download the APT20GN60BDQ1G datasheet PDF. This datasheet also covers the APT20GN60BDQ1 variant, as both devices belong to the same high speed pt igbt family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (APT20GN60BDQ1_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TYPICAL PERFORMANCE CURVES APT20GN60BDQ1 APT20GN60BD_SDQ1(G) APT20GN60SDQ1 APT20GN60BDQ1(G) APT20GN60SDQ1(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.