APT24F50B Datasheet | Microsemi

FEATURES - Fast switching with low EMI - Low trr for high reliability - Ultra low Crss for improved noise immunity - Low gate charge - Avalanche energy rated - Ro HS pliant TYPICAL APPLICATIONS - ZVS phase shifted and other full bridge - Half bridge - PFC and other boost converter - Buck converter - Single and two switch forward - Flyback Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Ratings 24 15 70 ±30 495 11 Unit V m J A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight 0.22 6.2 10 1.1 -55 0.15 150 300 Min Typ Max 335 0.37 Unit W °C/W °C 4-2007 050-8132 Rev A oz g in- lbf N- m Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw Microsemi Website - http://.microsemi. Static Characteristics Symbol VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS TJ = 25°C unless otherwise specified Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 11A AP24F50B_S Typ 0.60 0.11 4 -10 Max Unit V V/°C Ω V m V/°C µA n A Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On...