• Part: APT2X61S20J
  • Description: HIGH VOLTAGE SCHOTTKY DIODES
  • Category: Diode
  • Manufacturer: Microsemi
  • Size: 244.44 KB
Download APT2X61S20J Datasheet PDF
Microsemi
APT2X61S20J
APT2X61S20J is HIGH VOLTAGE SCHOTTKY DIODES manufactured by Microsemi.
FEATURES - Ultrafast Recovery Times - Soft Recovery Characteristics - Popular SOT-227 Package - Low Forward Voltage - High Blocking Voltage - Low Leakage Current PRODUCT BENEFITS - Low Losses - Low Noise Switching - Cooler Operation - Higher Reliability Systems - Increased System Power Density MAXIMUM RATINGS Symbol .. All Ratings: TC = 25°C unless otherwise specified. APT2X61S20J UNIT Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (TC =106°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Operating and Storage Temperature Range Avalanche Energy (2A, 30m H) VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG EAVL Volts 75 137 600 -55 to 150 60 °C m J Amps STATIC ELECTRICAL CHARACTERISTICS Symbol IF = 60A VF Forward Voltage IF = 120A IF = 60A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V Microsemi Website - http://.microsemi. UNIT .83 .98 .72 .90 Volts VR = 200V, TJ = 125°C 25 300 m A p F 053-6044 Rev...