APT39M60J
APT39M60J is N-Channel MOSFET manufactured by Microsemi.
600V, 42A, 0.11Ω Max
N-Channel MOSFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
2 T-
"UL Recognized"
ISOTOP ® file # E145592
APT39M60J Single die MOSFET
Features
- Fast switching with low EMI/RFI
- Low RDS(on)
- Ultra low Crss for improved noise immunity
- Low gate charge
- Avalanche energy rated
- Ro HS pliant
TYPICAL APPLICATIONS
- PFC and other boost converter
- Buck converter
- Two switch forward (asymmetrical bridge)
- Single switch forward
- Flyback
- Inverters
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
Ratings 42 26 210 ±30 1580 28
Unit
V m J A
Thermal and Mechanical Characteristics
Symbol PD RθJC RθCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60h Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight 29.2 Torque 10 Terminals and Mounting Screws....
