APT4F120K Datasheet | Microsemi

- Fast switching with low EMI - Low trr for high reliability - Ultra low Crss for improved noise immunity - Low gate charge - Avalanche energy rated - Ro HS pliant TYPICAL APPLICATIONS - ZVS phase shifted and other full bridge - Half bridge - PFC and other boost converter - Buck converter - Single and two switch forward - Flyback Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Ratings 4 3 15 ±30 310 2 Unit Gate - Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive V m J A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ, TSTG TL WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight Min -55 Typ .11 0.07 1.22 Max 225 .56 150 300 10 1.1 Unit W °C/W °C oz 050-8163 Rev D 3-2010 g in- lbf N- m Torque Mounting Torque (TO-220 Package), 4-40 or M3 screw Microsemi Website - http://.microsemi. Static Characteristics...