APT50GT120B2RDQ2G - Thunderbolt IGBT

Microsemi (now Microchip Technology)

Key Features

Low Forward Voltage Drop.
Low Tail Current.
RoHS Compliant.
RBSOA and SCSOA Rated.
High Frequency Switching to 50KHz.
Ultra Low Leakage Current Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation. Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG T.

APT50GT120B2RDQ2G thunderbolt igbt by Microsemi (now Microchip Technology) - Datasheet Preview

Datasheet Details

Part number	APT50GT120B2RDQ2G
Manufacturer	Microsemi (now Microchip Technology)
File Size	1.07 MB
Description	Thunderbolt IGBT
Datasheet	APT50GT120B2RDQ2G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com APT50GT120B2RDQ2G 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. Features • Low Forward Voltage Drop • Low Tail Current • RoHS Compliant • RBSOA and SCSOA Rated • High Frequency Switching to 50KHz • Ultra Low Leakage Current Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.