APT58M80J Datasheet | Microsemi

FEATURES - Fast switching with low EMI/RFI - Low RDS(on) - Ultra low Crss for improved noise immunity - Low gate charge - Avalanche energy rated - Ro HS pliant TYPICAL APPLICATIONS - PFC and other boost converter - Buck converter - Two switch forward (asymmetrical bridge) - Single switch forward - Flyback - Inverters Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Ratings 58 36 325 ±30 3725 43 Unit V m J A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60h Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight -55 2500 1.03 29.2 10 1.1 0.15 150 Min Typ Max 960 0.13 Unit W °C/W °C V 1-2007 050-8111 Rev A oz g in- lbf N- m Torque Terminals and Mounting Screws. Microsemi Website - http://.microsemi. Static Characteristics Symbol VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS TJ = 25°C unless otherwise specified Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 43A Typ 0.87 0.09 4 -10 Max Unit V V/°C Ω V m V/°C µA n A Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance Min 800 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current VGS = VDS, ID = 5m A VDS = 800V VGS = 0V TJ = 25°C TJ =...