APT60GA60JD60 Overview
APT60GA60JD60 600V High Speed PT IGBT ® E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 27 -2 C G through leading technology silicon design and lifetime control processes. A reduced Eoff T SO VCE(ON) tradeoff results in superior efficiency pared to other IGBT technologies.
APT60GA60JD60 Key Features
- Fast switching with low EMI
- Very Low Eoff for maximum efficiency
- Ultra low Cres for improved noise immunity
- Low conduction loss
- Low gate charge
- Increased intrinsic gate resistance for low EMI
- RoHS pliant