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APTGF50DH60T1G Datasheet Asymmetrical - Bridge NPT IGBT Power Module

Manufacturer: Microsemi (now Microchip Technology)

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Overview

APTGF50DH60T1G Asymmetrical - Bridge NPT IGBT Power Module VCES = 600V IC = 50A* @ Tc = 80°C www.DataSheet4U.

Key Features

  • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated.
  • Very low stray inductance - Symmetrical design.
  • Internal thermistor for temperature monitoring.
  • High level of integration Benefits.
  • Outstanding performance at high frequency operation.
  • Direct mounting to heatsink (isolated package).
  • L.

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