• Part: APTGT200DH60G
  • Description: Asymmetrical - Bridge Trench Field Stop IGBT Power Module
  • Manufacturer: Microsemi
  • Size: 282.75 KB
Download APTGT200DH60G Datasheet PDF
Microsemi
APTGT200DH60G
APTGT200DH60G is Asymmetrical - Bridge Trench Field Stop IGBT Power Module manufactured by Microsemi.
Asymmetrical - Bridge Trench + Field Stop IGBT® .. Power Module VBUS Q1 G1 CR3 VCES = 600V IC = 200A @ Tc = 80°C Application - Welding converters - Switched Mode Power Supplies - Switched Reluctance Motor Drives Features - Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 k Hz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Kelvin emitter for easy drive - Very low stray inductance - Symmetrical design - M5 power connectors - High level of integration Benefits - Stable temperature behavior - Very rugged - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Easy paralleling due to positive TC of VCEsat - Low profile - Ro HS...