• Part: APTGT20X60T3G
  • Description: 3 Phase bridge Trench Field Stop IGBT
  • Manufacturer: Microsemi
  • Size: 296.38 KB
Download APTGT20X60T3G Datasheet PDF
Microsemi
APTGT20X60T3G
APTGT20X60T3G is 3 Phase bridge Trench Field Stop IGBT manufactured by Microsemi.
Features - Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 k Hz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Kelvin emitter for easy drive - Very low stray inductance - High level of integration - Internal thermistor for temperature monitoring Benefits - Outstanding performance at high frequency operation - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Solderable terminals both for power and signal for easy PCB mounting - Low profile - Ro HS pliant 11 10 12 8 7 4 3 2 13 It is remended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together. 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 150°C Max ratings 600 32 20 40 ±20 62 40A @ 550V Unit V A July, 2007 1-5 APTGT20X60T3G - Rev 0 .. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on .microsemi. .microsemi. All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage...