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APTGT300DH60G - IGBT Power Module

Features

Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated.
Kelvin emitter for easy drive.
Very low stray inductance - Symmetrical design - M5 power connectors.
High level of integration Benefits.
Stable temperature behavior.
Very rugged.
Direct mounting to heatsink.

Microsemi Corporation

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APTGT300DH60G IGBT Power Module by Microsemi Corporation - Datasheet Preview — Datasheet preview – APTGT300DH60G

Datasheet Details

Part number	APTGT300DH60G
Manufacturer	Microsemi Corporation
File Size	283.20 KB
Description	IGBT Power Module
Datasheet	APTGT300DH60G Datasheet
Additional preview pages of the APTGT300DH60G datasheet.

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Full PDF Text Transcription

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APTGT300DH60G Asymmetrical - Bridge Trench + Field Stop IGBT® www.datasheet4u.

Published: May 26, 2009 |