APTGT400SK60D3G Datasheet | Microsemi

res - Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 k Hz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Kelvin emitter for easy drive - High level of integration - M6 power connectors Benefits - Stable temperature behavior - Very rugged - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Easy paralleling due to positive TC of VCEsat - Ro HS pliant Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 600 500 400 800 ±20 1250 800A @ 520V Unit V A V W March, 2011 1-5 APTGT400SK60D3G - Rev 1 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on .microsemi. .microsemi. All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE = 15V IC = 400A Tj = 150°C VGE = VCE , IC = 6.4 m A VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 500 1.9 6.5 400 Unit µA V V n A Dynamic Characteristics...