APTGT400U120D4G
APTGT400U120D4G is IGBT Power Module manufactured by Microsemi.
- Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 k Hz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
- -
- - Kelvin emitter for easy drive M6 connectors for power M4 connectors for signal High level of integration
3 5 2
Benefits
- Stable temperature behavior
- Very rugged
- Direct mounting to heatsink (isolated package)
- Low junction to case thermal resistance
- Easy paralleling due to positive TC of VCEsat
- Ro HS pliant
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector
- Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate
- Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1200 650 400 800 ±20 1785 800A@1050V Unit V A
- Rev 2 July, 2008
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on .microsemi.
.microsemi.
1-5
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate
- Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 400A Tj = 125°C VGE = VCE , IC = 12m A VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 750 2.1 6.5 600 Unit µA V V n A
Dynamic Characteristics...
