APTGT450A60G
APTGT450A60G is IGBT Power Module manufactured by Microsemi.
Features
- Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 k Hz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
- Kelvin emitter for easy drive
- Very low stray inductance
- Symmetrical design
- M5 power connectors
- High level of integration Benefits
- Stable temperature behavior
- Very rugged
- Direct mounting to heatsink (isolated package)
- Low junction to case thermal resistance
- Easy paralleling due to positive TC of VCEsat
- Low profile
- Ro HS pliant
E1
Q2 G2
E2 0/VBUS
G1 E1
VBUS
0/VBUS
E2 G2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector
- Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate
- Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C
Reverse Bias Safe Operating Area
900A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on .microsemi.
.microsemi....
