APTGT450DU60G
APTGT450DU60G is IGBT Power Module manufactured by Microsemi.
Features
- Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 k Hz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
- Kelvin emitter for easy drive
- Very low stray inductance
- Symmetrical design
- M5 power connectors
- High level of integration Benefits
- Stable temperature behavior
- Very rugged
- Direct mounting to heatsink (isolated package)
- Low junction to case thermal resistance
- Easy paralleling due to positive TC of VCEsat
- Low profile
- Ro HS pliant
C1
C2
E2 G2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector
- Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate
- Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C
Max ratings 600 550 450 600 ±20 1750 900A @ 550V
Unit V A V W
June, 2006 1-5 APTGT450DU60G
- Rev 1
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on .microsemi.
.microsemi.
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage...
