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APTGT50TL601G - Power-Module IGBT

Features

Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated.
Very low stray inductance.
High level of integration Benefits.
Stable temperature behavior.
Very rugged.
Direct mounting to heatsink (isolated package).
Low junction to case thermal resistance.
Easy paralleling due to positi.

Microsemi Corporation

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APTGT50TL601G Power-Module IGBT by Microsemi Corporation - Datasheet Preview — Datasheet preview – APTGT50TL601G

Datasheet Details

Part number	APTGT50TL601G
Manufacturer	Microsemi Corporation
File Size	250.54 KB
Description	Power-Module IGBT
Datasheet	APTGT50TL601G Datasheet
Additional preview pages of the APTGT50TL601G datasheet.

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Published: Apr 11, 2010 |