APTML602U12R020T3AG Datasheet | Microsemi

res - - - - - Linear MOSFET Very low stray inductance Internal thermistor for temperature monitoring High level of integration Al N substrate for improved thermal performance Benefits 28 27 26 25 29 30 23 22 20 19 18 16 15 - - - - - - 31 32 2 3 4 7 8 10 11 12 14 13 Direct mounting to heatsink (isolated package) easy series and parallels binations for power and voltage improvements Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Ro HS pliant Pins 13/14 ; 29/30 ; 31/32 must be shorted together Absolute maximum ratings (per leg) Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation n Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 600 45- 33- 172 ±30 150 568 45 50 3000 Unit V A V mΩ W A m J Tc = 25°C - Output current must be limited to 31A @ TC=25°C and 22A @ TC=80°C to not exceed the shunt specification. n In saturation mode These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on .microsemi. .microsemi. 1- 3 - Rev 1 March, 2010 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics (per leg) Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VDS = 600V ; VGS = 0V VDS = 480V ; VGS = 0V Tj = 25°C Tj =...