• Part: BFY90
  • Description: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
  • Category: Transistor
  • Manufacturer: Microsemi
  • Size: 84.07 KB
Download BFY90 Datasheet PDF
Microsemi
BFY90
Features - - - - Silicon NPN, To-72 packaged VHF/UHF Transistor Low Noise, 2.5 d B (typ) @ 500 MHz, 5v, 2.0 m A, 1.3 GHz Current-Gain Bandwidth Product @ 25m A IC 2 1 3 4 Power Gain, GPE = 19 d B (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION : Silicon NPN transistor, designed for VHF/UHF equipment. Applications include low noise amplifier; oscillator, and mixer applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 50 Unit Vdc Vdc Vdc m A Thermal Data D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 200 1.14 m Watts m W/ ºC MSC1310.PDF 10-25-99 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 10 m Adc, IB = 0) Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) 15 Value Typ. Max. 10 Unit Vdc n A (on) HFE DC Current Gain...