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BFY90 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Description

Silicon NPN transistor, designed for VHF/UHF equipment.

Applications include low noise amplifier; oscillator, and mixer applications.

Features

  • Silicon NPN, To-72 packaged VHF/UHF Transistor Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA, 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC 2 1 3 4 Power Gain, GPE = 19 dB (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector 4. Case TO-72.

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Other Datasheets by Microsemi Corporation

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    140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFY90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-72 packaged VHF/UHF Transistor Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA, 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC 2 1 3 4 Power Gain, GPE = 19 dB (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Silicon NPN transistor, designed for VHF/UHF equipment. Applications include low noise amplifier; oscillator, and mixer applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.
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