CDLL4150
CDLL4150 is SWITCHING DIODE manufactured by Microsemi.
- 1N4150UR-1 AVAILABLE IN JAN, PER MIL-PRF-19500/231
- SWITCHING DIODE
- HERMETICALLY SEALED
- METALLURGICALLY BONDED
- DOUBLE PLUG CONSTRUCTION
JANTX, AND JANTXV
1N4150UR-1 1N3600UR CDLL4150 CDLL3600
MAXIMUM RATINGS
Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 m A @ TA = + 25°C Derating: 3.1 m A dc/°C Above TEC = + 110°C Forward Surge Current: 4A, (tp = 1µs); 0.5A (tp = 1s)
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed.
Type V BR IR = 10 V RWM I R1 VR = 50 V dc TA = 25°C V (pk) 50 50 µA dc 0.1 0.1 1 R2 VR = 50 V dc TA = 150°C µA dc 100 100 C VR = 0; f = 1 Mhz; ac signals = 50 m V (p-p) trr IF = IR = 10 to 100 m A dc R L = 100 ohms ns 4 4
DIM D F G G1 S
MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.70 0.063 0.067 0.41 0.55 0.016 0.022 3.30 3.70 .130 .146 2.54 REF. .100 REF. 0.03 MIN. .001 MIN.
µA
FIGURE 1
V dc CDLL3600 CDLL4150,-1 75 75 p F 2.5 2.5
DESIGN DATA
CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80; LL34)
FORWARD VOLTAGE LIMITS
- ALL TYPES
V F1 Limits I F = 1 m A dc V F2 I F = 10 m A dc V F3 I F = 50 m A dc (Pulsed) V dc 0.780 0.860 V F4 I F = 100 m A dc (Pulsed) V dc 0.820 0.920 V F5
LEAD FINISH: Tin / Lead
I F = 200 m A dc (Pulsed) V dc 0.870 1.000
V dc minimum maximum 0.540 0.620
V dc 0.680 0.740
THERMAL RESISTANCE (ROJEC): 100 °C/W maximum AT L = 0 THERMAL IMPEDANCE: (ZOJX): 70 °C/W maximum POLARITY: Cathode end is banded. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/°C. The COE of the Mounting Surface System Should Be Selected To Provide A Suitable Match With This Device.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (781) 689-0803 WEBSITE: http://.microsemi.
IN4150UR-1, IN3600UR-1, CDLL4150 and CDLL3600
100 IF
- Forward Current
- (m A)
10 0º...
