• Part: JAN2N1711
  • Description: NPN LOW POWER SILICON TRANSISTOR
  • Manufacturer: Microsemi
  • Size: 85.46 KB
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Datasheet Summary

TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices .. Qualified Level 2N1890 JAN JANTX 2N1711 MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCBO VEBO IC PT TJ, Tstg Symbol ZθJX 2N1711 2N1890 Unit Vdc Vdc mAdc W W 0 C Unit C/W @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range 7.0 500 0.8 3.0 -65 to +200 Max. 58 THERMAL CHARACTERISTICS Characteristics Thermal Impedance 1) Derate linearly 4.57 mW/0C for TA > 250C 2) Derate linearly 17.2 mW/0C for TC > 250C TO-5- - See appendix A for package outline ELECTRICAL...