JANTX2N3846 Overview
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/412 Devices .. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc; IB = 0 Collector-Emitter Cutoff Current VCE = 300 Vdc;.
JANTX2N3846 datasheet by Microsemi (now Microchip Technology).
| Part number | JANTX2N3846 |
|---|---|
| Datasheet | JANTX2N3846_MicrosemiCorporation.pdf |
| File Size | 83.05 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | NPN POWER SILICON TRANSISTOR |
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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/412 Devices .. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc; IB = 0 Collector-Emitter Cutoff Current VCE = 300 Vdc;.
View all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| JANTX2N3847 | NPN POWER SILICON TRANSISTOR |
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| JANTX2N3822 | N-Channel MOSFET |
| JANTX2N3823 | N-Channel MOSFET |
| JANTX2N3867 | Silicon PNP Power Transistors |
| JANTX2N3867S | Silicon PNP Power Transistors |
| JANTX2N3868 | Silicon PNP Power Transistors |
| JANTX2N3868S | Silicon PNP Power Transistors |
| JANTX2N3879 | NPN POWER SILICON TRANSISTOR |
| JANTX2N3027 | SCRs 0.5 Amp/ Planear |