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LX5506M - InGaP HBT 4.5 - 6GHz Power Amplifier

General Description

KEY

Key Features

  • Broadband 4.9-5.9GHz Operation Advanced InGaP HBT Single-Polarity 3.3V Supply Power Gain ~ 30dB at 5.25GHz Power Gain > ~28dB Across 4.95.9GHz EVM ~ -30dB at Pout=+17dBm at 5.25GHz EVM ~ -30dB at Pout=+18dBm at 5.85GHz Total Current ~140mA for Pout = +17dBm at 5.25GHz (For High Duty Cycle of 90%) Maximum Linear Power ~ +22dBm for OFDM Mask Compliance Maximum Linear Efficiency ~ 20% On-chip Output Powe.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LX5506M TM ® InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Broadband 4.9-5.9GHz Operation Advanced InGaP HBT Single-Polarity 3.3V Supply Power Gain ~ 30dB at 5.25GHz Power Gain > ~28dB Across 4.95.9GHz EVM ~ -30dB at Pout=+17dBm at 5.25GHz EVM ~ -30dB at Pout=+18dBm at 5.85GHz Total Current ~140mA for Pout = +17dBm at 5.25GHz (For High Duty Cycle of 90%) Maximum Linear Power ~ +22dBm for OFDM Mask Compliance Maximum Linear Efficiency ~ 20% On-chip Output Power Detector with Improved Frequency and LoadVSWR Insensitivity On-Chip Input Match On-Chip RF Decoupling Simple Output Match for Optimal Broadband EVM 2 Small Footprint: 3x3mm Low Profile: 0.9mm APPLICATIONS ƒ ƒ ƒ FCC U-NII Wireless IEEE 802.