MRF3866
MRF3866 is RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS manufactured by Microsemi.
Features
..
- Low Cost SO-8 Plastic Surface Mount Package.
- -
- S-Parameter Characterization Tape and Reel Packaging Options Available Maximum Available Gain = 17 d B @ 300 MHz
SO-8
R1 suffix- Tape and Reel, 500 units R2 suffix- Tape and Reel, 2500 units
DESCRIPTION
: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 30 55 3.5 400 Unit Vdc Vdc Vdc m A
Thermal Data
D Total Device Dissipation @ TC = 25ºC Derate above 25ºC 1.0 8 Watts m W/ ºC
MSC1312.PDF 10-25-99
MRF3866, R1, R2
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
..
STATIC (off)
Symbol BVCER BVCBO BVEBO ICEO
Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 m Adc, IB = 0, rbe = 10 Ohms) Collector-Base Breakdown Voltage (IC = 0.1 m Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 m Adc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) 55 55 3.5
- Value Typ. Max. .02 Unit Vdc Vdc Vdc m A
(on)
HFE DC Current Gain (IC = 360 m Adc, VCE = 5.0 Vdc) (IC = 50 m Adc, VCE = 5.0 Vdc) 5.0 10 250 200
DYNAMIC
Symbol COB Ftau Test Conditions Min. Output Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) Current-Gain Bandwidth Product (IC = 50 m Adc, VCE = 15 Vdc, f = 200 MHz) 800 Value Typ. 1.6 1000 Max. 2.0 Unit p F MHz
MSC1312.PDF 10-25-99
MRF3866, R1, R2
FUNCTIONAL
Symbol Test Conditions Min. U max .. MAG |S21|
Value Typ. 15 17 12.5 Max. Unit d B d B d B
Maximum Unilateral Gain IC = 50 m Adc, VCE = 15 Vdc, f = 300 MHz Maximum Available Gain IC = 50 m Adc, VCE = 15 Vdc, f = 300 MHz Insertion Gain IC = 50 m Adc, VCE = 15 Vdc, f = 300 MHz
Table 1. mon Emitter S-Parameters, @ VCE = 15 V, IC = 50 m A f
S11
(MHz)
100 300 500 700...
