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MRF4427 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

General Description

Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.

Key Features

  • Low Cost SO-8 Plastic Surface Mount Package. S-Parameter Characterization Tape and Reel Packaging Options Available Low Voltage Version of MRF3866 Maximum Available Gain.
  • 20dB(typ) @ 200MHz SO-8 R1 suffix.
  • Tape and Reel, 500 units R2 suffix.
  • Tape and Reel, 2500 units.

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Other Datasheets by Microsemi (now Microchip Technology)

Part Number Description
MRF3866 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF3866R1 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF3866R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF4427, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • Low Cost SO-8 Plastic Surface Mount Package. S-Parameter Characterization Tape and Reel Packaging Options Available Low Voltage Version of MRF3866 Maximum Available Gain – 20dB(typ) @ 200MHz SO-8 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 2.