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MRF4427 Datasheet Rf & Microwave Discrete Low Power Transistors

Manufacturer: Microsemi (now Microchip Technology)

Overview: 140 MERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF4427, R1, R2 RF & MICROWAVE DISCRETE LOW POWER.

General Description

: Designed for general-purpose RF amplifier applications, such as;

pre-drivers, Oscillators, etc.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 2.0 400 Unit Vdc Vdc Vdc mA Thermal Data P T stg R D Total Device Dissipation @ TC = 25ºC Derate above 25ºC Storage Temperature 1.5 12.5 -65 to + 150 Watts mW/ ºC ºC ºC/W θJA Thermal Resistance, Junction to Ambient 125 MSC1313.PDF 10-25-99 MRF4427, R1, R2 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICEO Test Conditions Min.

Key Features

  • Low Cost SO-8 Plastic Surface Mount Package. S-Parameter Characterization Tape and Reel Packaging Options Available Low Voltage Version of MRF3866 Maximum Available Gain.
  • 20dB(typ) @ 200MHz SO-8 R1 suffix.
  • Tape and Reel, 500 units R2 suffix.
  • Tape and Reel, 2500 units.

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MRF4427 Distributor