MRF545 Overview
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. 20 100 Unit Vdc Vdc Vdc µA µA (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 6.0 Vdc) 15 - DYNAMIC Symbol Test Conditions Min. 3.2 Unit pF pF pF MHz MSC1315.PDF 10-25-99 MRF545 FUNCTIONAL Symbol Test Conditions Min.
MRF545 Key Features
- Silicon PNP, high Frequency, high breakdown, To-39 packaged, Transistor Maximum Unilateral Gain = 14 dB (typ) @ f = 200
- BVCBO = 100 V (min) High FT
- 1400 MHz