MS2213 Description
The MS2213 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions. Low RF and puterized automatic wire bonding techniques ensure high reliability and product consistency.
MS2213 Key Features
- REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHIN