MS2473
DESCRIPTION
The MS2473 is a high power MON BASE bipolar transistor. It is designed for pulsed systems in the 1090MHz frequency band. The device has gold thin-film metallization for proven highest MTTF. Low thermal resistance .. packaging reduces the junction temperature and extends device lifetime.
CASE OUTLINE M112
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25o C2 Maximum Voltage and Current BVcbo Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 2300 Watts 65 Volts 3.5 Volts 46 Amps
- 65 to + 150o C + 200o C
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pin Pg ηc RLIN BVebo BVcbo Ices h FE CHARACTERISTICS Power Out Power Input = 150W Power Gain Collector Efficiency Input Return Loss TEST CONDITIONS F = 1090 MHz Vcc = 50 Volts PW = 10 µsec DF = 1% F = 1090 MHz MIN 600 150 6.0 35 10 TYP MAX UNITS Watts Watts d B % d B
Θjc2
Emitter to Base Breakdown Collector to Base Breakdown...
