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MSAFX10N90A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Part number MSAFX10N90A
Manufacturer Microsemi Corporation
File Size 71.37 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet MSAFX10N90A Datasheet
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Description

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25° C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC DRAIN MAX.900 900 +/-20 +/-30 10 6 40 10 30 tbd 5.0 300 -55 to +150 -55 to +150 10 40 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watts ° C ° C Amps Amps ° C/W Drain-to-Gate Breakdown Voltage @ TJ ≥ 25° C, RGS= 1 MΩ Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current 100° C Tj= 25°

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