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MSAFX10N90A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

MAX.

Features

  • Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance.
  • Very low thermal resistance.
  • Reverse polarity available upon request Maximum Ratings @ 25° C (unless otherwise specified).

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Full PDF Text Transcription

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2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAFX10N90A 900 Volts 10 Amps 1.1 Ω N-CHANNEL ENHANCEMENT MODE POWER MOSFET www.DataSheet4U.com Features • • • • • Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance • Very low thermal resistance • Reverse polarity available upon request Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25° C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC DRAIN MAX. 900 900 +/-20 +/-30 10 6 40 10 30 tbd 5.0 300 -55 to +150 -55 to +150 10 40 0.
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