MSAGA11F120D - Fast IGBT Die

Product Overview

Microsemi Corporation

Datasheet Details

Part number	MSAGA11F120D
Manufacturer	Microsemi Corporation
File Size	184.60 KB
Description	Fast IGBT Die
Datasheet	MSAGA11F120D Datasheet
Additional preview pages of the MSAGA11F120D datasheet.

Product details

Description

N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical. Collector/Gate Metallization: Ti Ni (1 um) Ag (0.2 um) for soft solder attach Surge Current (ICM) - Amps 55 10µs x 4ms double exponential

Features

Low Forward Voltage Drop, Low Tail Current Avalanche and Surge Rated High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated.
Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix 35-50% of ICM Max 10µs 4000 µs.

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Published: Jul 31, 2009 |