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MSAGA11F120D Datasheet Fast IGBT Die

Manufacturer: Microsemi (now Microchip Technology)

Overview: .. 2830 S. Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989 MSAGA11F120D Fast IGBT Die for Implantable Cardio Defibrillator.

General Description

: • • • N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical.

• Collector/Gate Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach Surge Current (ICM) - Amps 55 10µs x 4ms double exponential

Key Features

  • Low Forward Voltage Drop, Low Tail Current Avalanche and Surge Rated High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated.
  • Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix 35-50% of ICM Max 10µs 4000 µs.

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MSAGA11F120D Distributor