MSAGA11F120D Description
N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical.
MSAGA11F120D Key Features
- Low Forward Voltage Drop, Low Tail Current Avalanche and Surge Rated High Freq. Switching to 20KHz Ultra Low Leakage Cur
- Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix