Datasheet4U Logo Datasheet4U.com

MSAGA11F120D - Fast IGBT Die

Description

N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical.

Collector/Gate Metallization: Ti Ni (1 um) Ag (0.2 um) for

Features

  • Low Forward Voltage Drop, Low Tail Current Avalanche and Surge Rated High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated.
  • Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix 35-50% of ICM Max 10µs 4000 µs.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MSA-0100 Cascadable Silicon Bipolar MMIC Amplifier Hewlett-Packard
MSA-0104 Cascadable Silicon Bipolar MMIC Amplifier Hewlett-Packard
MSA-0135 Cascadable Silicon Bipolar MMIC Amplifier Hewlett-Packard
MSA-0136 Cascadable Silicon Bipolar MMIC Amplifier Hewlett-Packard
MSA-0170 Cascadable Silicon Bipolar MMIC Amplifier Hewlett-Packard

Other Datasheets by Microsemi (Microchip)

Part Number Description
MSAGX60F60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
MSAGX75F60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
MSAGX75L60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
MSAGZ52F120A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
MSAER12N50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 2830 S. Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989 MSAGA11F120D Fast IGBT Die for Implantable Cardio Defibrillator Applications DESCRIPTION: • • • N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical. • Collector/Gate Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach Surge Current (ICM) - Amps 55 10µs x 4ms double exponential FEATURES: • • • • • Low Forward Voltage Drop, Low Tail Current Avalanche and Surge Rated High Freq.
Published: |