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MSAGX75F60A - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Description

MAX.

Features

  • Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAGX75F60B high frequency IGBT, low switching losses Maximum Ratings @ 25° C (unless otherwise specified).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGX75F60A 600 Volts 75 Amps 2.7 Volts vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAGX75F60B high frequency IGBT, low switching losses Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg θJC MAX. 600 600 +/-20 +/-30 75 50 200 100 300 -55 to +150 -55 to +150 0.
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