Datasheet4U Logo Datasheet4U.com

MSAHX60F60A - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Download the MSAHX60F60A datasheet PDF. This datasheet also covers the MSAGX60F60A variant, as both devices belong to the same n-channel insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

MAX.

Features

  • Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)60F60B high frequency IGBT, low switching losses anti-parallel FREDiode (MSAHX60F60A only) Maximum Ratings @ 25° C (unless otherwise specified).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSAGX60F60A_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MSA-0100 Cascadable Silicon Bipolar MMIC Amplifier Hewlett-Packard
MSA-0104 Cascadable Silicon Bipolar MMIC Amplifier Hewlett-Packard
MSA-0135 Cascadable Silicon Bipolar MMIC Amplifier Hewlett-Packard
MSA-0136 Cascadable Silicon Bipolar MMIC Amplifier Hewlett-Packard
MSA-0170 Cascadable Silicon Bipolar MMIC Amplifier Hewlett-Packard

Other Datasheets by Microsemi (Microchip)

Part Number Description
MSAHZ52F120A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
MSAER12N50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET
MSAER30N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET
MSAEZ33N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET
MSAEZ50N10A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGX60F60A MSAHX60F60A 600 Volts 60 Amps 2.9 Volts vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)60F60B high frequency IGBT, low switching losses anti-parallel FREDiode (MSAHX60F60A only) Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg IS ISM θJC MAX.
Published: |