| Part number | MSAHZ52F120A |
|---|---|
| Manufacturer | Microsemi Corporation |
| File Size | 69.99 KB |
| Description | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| Datasheet |
 MSAHZ52F120A Datasheet
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| Note |
This datasheet PDF includes multiple part numbers: MSAHZ52F120A, MSAGZ52F120A. Please refer to the document for exact specifications by model. |
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Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC MAX.1200 1200 +/-20 +/-30 52 33 104 66 65 260 66 300 -55 to +150 -55 to +150 50 100 0.4 COLLECTOR UNIT Volts Volts Volts Volts Amps Amps mJ A A Watts °C °C Amps Amps °C/W Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collecto
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