MSAHZ52F120A
Description
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC MAX.
- Part: MSAHZ52F120A
- Description: N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
- Category: Transistor
- Manufacturer: Microsemi
- Size: 69.99 KB