PPNGZ52F120A Overview
Key Specifications
Mount Type: Through Hole
Pins: 3
Max Operating Temp: 150 °C
Description
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC MAX. 1200 1200 +/-20 +/-30 52 33 104 66 65 260 66 300 -55 to +150 -55 to +150 50 100 0.42 UNIT Volts Volts Volts Volts Amps Amps mJ A A Watts °C °C Amps Amps °C/W Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C Tj= 90°C Peak Collector Current (pulse width limited by Tjmax,) RG= 25Ω, Tj= 25°C VCE≤ 1200V, TJ= 150°C, tsc≤ 10µ s Tj= 25°C Tj= 90°C Avalanche energy (single pulse) @ IC= 25A, VCC= 50V, L= 200µ H, Short circuit current (SOA) , Short circuit (reverse) current (RBSOA) , VCE≤ 1200V, TJ= 150°C Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode, PPNHZ52F120A only) Pulse Source Current (Body Diode, PPNHZ52F120A only) Datasheet# PPC INC.
