Datasheet Summary
PPC INC.
7516 Central Industrial Drive Riviera Beach, FL 33404 PH: 561-842-0305 Fax: 561-845-7813
PPNGZ52F120A PPNHZ52F120A
Features
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Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance Reverse polarity available upon request: PPNH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (PPNHZ52F120A only)
TO-258
1200 Volts 52 Amps 3.2 Volts vce(sat)
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Maximum Ratings @ 25° C (unless otherwise specified)
DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ≥...