Datasheet4U Logo Datasheet4U.com

PPNHZ52F120A - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Description

MAX.

Features

  • Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance Reverse polarity available upon request: PPNH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (PPNHZ52F120A only) TO-258 1200 Volts 52 Amps 3.2 Volts vce(sat) N-.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PPN Polypropylene Film Capacitor HITANO
PPN102J212061000 Film Foil Capacitors SR-CAP
PPN102J212061000 Film Foil Capacitors SR-CAP
PPN102J414061000 Film Foil Capacitors SR-CAP
PPN102J414061000 Film Foil Capacitors SR-CAP

Other Datasheets by Microsemi (Microchip)

Part Number Description
PPNGZ52F120A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription

Click to expand full text
PPC INC. 7516 Central Industrial Drive Riviera Beach, FL 33404 PH: 561-842-0305 Fax: 561-845-7813 PPNGZ52F120A PPNHZ52F120A Features • • • • • • • • Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance Reverse polarity available upon request: PPNH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (PPNHZ52F120A only) TO-258 1200 Volts 52 Amps 3.2 Volts vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC MAX.
Published: |