• Part: PPNHZ52F120A
  • Description: N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
  • Manufacturer: Microsemi
  • Size: 102.84 KB
Download PPNHZ52F120A Datasheet PDF
PPNHZ52F120A page 2
Page 2
PPNHZ52F120A page 3
Page 3

Datasheet Summary

PPC INC. 7516 Central Industrial Drive Riviera Beach, FL 33404 PH: 561-842-0305 Fax: 561-845-7813 PPNGZ52F120A PPNHZ52F120A Features - - - - - - - - Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance Reverse polarity available upon request: PPNH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (PPNHZ52F120A only) TO-258 1200 Volts 52 Amps 3.2 Volts vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥...