SD1070 Description
This silicon epitaxial NPN planar high frequency transistor employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance and low output capacitance. These transistors are intended for Class A, B, or C amplifier, oscillator or frequency multiplier circuits...
SD1070 Key Features
- 400 MHz 28 Volts High Power Gain High Efficiency mon Emitter POUT = 13.5 W Min. @ 175 MHz