0150SC-1250M Datasheet | Microsemi

DESCRIPTION The 0150SC-1250M is a mon Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1250 Watts minimum of RF power from 150 to 160 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as VHF Weather Radar and Long Range Tracking Radar. The device is the first in a series of High Power Silicon Carbide Transistors from Microsemi PPG. CASE OUTLINE 55KT FET (mon Gate) See outline drawing ABSOLUTE MAXIMUM RATINGS Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Drain Current (Idg) Temperatures Storage Temperature Operating Junction Temperature 250 V - 1V 35A -65 to +150°C +250°C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Idss1 Drain-Source Leakage Current VGS = -15V, VDG = 95V Igss Gate-Source Leakage Current VGS = -20V, VDS = 0V θJC1 Thermal Resistance Pout=1250W 750 µA µA 0.15 ºC/W FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, Idq(avg) = 500 m A, Freq = 155 MHz, GPG Pin ηd ψ Po +1d B mon Gate Power Gain Input Power Drain Efficiency Load Mismatch Power Output - Higher Drive Pout = 1250 W, Pulsed Pulse Width = 300us, DF = 10% F = 155 MHz, Pout =1250W F = 155 MHz, Pout = 1250W F = 155 MHz, Pin = 190 W 9.0 9.5 150 160 60 10:1 Vsg Source-Gate Voltage Set for Idq(avg) = 500 m A 10.0 d B W % W Volts Dec...